RCT i-Side
higher reflectivity at lower etch depth
RCT i-Side with its improved process sequence enables high efficiency cell technologies such as PERC, n-type or Bifacial. RCT i-Side polishes wafer with highest reflectivity at cost effective etch depths. lt is optimized for lowest CoO by low chemical consumption, stable processes and small footprint.
RCT i-Side for single-side
junction isolation or polishing
textured wafer
polished wafer
after 4μm etch depth
Process | Inline junction isolation, polishing and PSG / BSG etching |
Nominal Throughput | 3,600 wafer/h, 5 lanes |
Conveyor Speed | 0.5 – 2.5 m/min, nominal 2.1 m/min |
Dimensions | 8880 x 2200 x 2120 mm³ (L x W x H) |
Wafer Size | 156 × 156±0.5mm / 156.75 × 156.75±0.25mm, ≥ 150 µm |
Etch Depth Range | 0.7 - 6 µm |
Bath Lifetime | > 1,500,000 wafers |
Breakage Rate | < 0.05% |