RCT i-Side
higher reflectivity at lower etch depth
RCT i-Side
Edge isolation, polishing and PSG / BSG removal
for multi and mono Si wafers
RCT i-Side with its improved process sequence enables high efficiency cell technologies such as PERC, n-type or Bifacial. RCT i-Side polishes wafer with highest reflectivity at cost effective etch depths. lt is optimized for lowest CoO by low chemical consumption, stable processes and small footprint.
RCT i-Side for single-side
junction isolation or polishing
textured wafer
polished wafer
after 4μm etch depth
Advantages
- Improved hydrodynamics of etch bath allows higher refliectivity at lower etch depth for PERC cells,
saving 60% of consumables - Patended process sequence with pre-treatment, rinse and junction isolation / polishing
- Optimized cost of ownership: up to 30% reduced DI water consumption and compact footprint by
integration of chiller into main module - Best in class productivity: less than one hour for bath change and unique quick-lock system of
spray bars for easy and fast maintenance - Advanced alkaline cleaning design to avoid KOH contamination
- Surface near frequent chemical exchange for high-performance metal impurity cleaning
Technical Data
| Process | Inline junction isolation, polishing and PSG / BSG etching |
| Nominal Throughput | 3,600 wafer/h, 5 lanes |
| Conveyor Speed | 0.5 – 2.5 m/min, nominal 2.1 m/min |
| Dimensions | 8880 x 2200 x 2120 mm³ (L x W x H) |
| Wafer Size | 156 × 156±0.5mm / 156.75 × 156.75±0.25mm, ≥ 150 µm |
| Etch Depth Range | 0.7 - 6 µm |
| Bath Lifetime | > 1,500,000 wafers |
| Breakage Rate | < 0.05% |
Learn more:
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